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Program

Technical Program

The AVS 25th International Conference on Atomic Layer Deposition (ALD 2025) featuring the 12th International Atomic Layer Etching Workshop (ALE 2025) will be a three-day meeting dedicated to the science and technology of atomic layer controlled deposition of thin films and atomic layer etching.  Since 2001, the ALD conference has been held alternately in the United States, Europe and Asia, allowing fruitful exchange of ideas, know-how and practices between scientists. The conference will take place Sunday, June 22-Wednesday, June 25, 2025, at the International Convention Center Jeju (ICC Jeju), Jeju Island, South Korea.

As in past conferences, the meeting will be preceded (Sunday, June 22) by one day of tutorials and perspectives and a welcome reception. Sessions will take place (Monday-Wednesday, June 23-25) along with an industry tradeshow. All presentations will be audio-recorded and provided to attendees following the conference (posters will be included as PDFs). Anticipated attendance is 700+.

Awards: Both ALD and ALE will recognize student achievement with awards for the best student posters and/or talks.
See Awards Page

View the Technical Program

Tutorial Speakers

Sunday, June 22, 2025
Jihwan An POSTECH, South Korea ALD for Hydrogen Technology
Pil Sung Jo Gauss Labs, South Korea ALD Process Optimization Using Machine Learning: A Practical Tutorial for Domain Experts
Junjie Zhao Zhejiang University, China ALD-Enabled Synthesis of Metal-Organic Framework Thin Films: Fundamentals to Applications
Hoonjoo Na Samsung Electronics, South Korea The Importance of Interconnect Technology of Si Devices and The Extension of ALD Processes
Jane P. Chang University of California, Las Angeles, USA Atomic Layer Etching: Basics, Chemistries, and New Developments
Silvia Armini IMEC, Belgium The Era of Atomic Scale Processing: When Area-Selective Deposition Meets Atomic Layer Etching

ALD Plenary Speaker

ALD Invited Speakers

  • Kristina Ashurbekova (CIC nanoGUNE, Spain)
  • David Bergsman (University of Washington, USA)
  • Ageeth Bol (University of Michigan, USA)
  • Miin-Jang Chen (National Taiwan University, Taiwan)
  • Rong Chen (Huazhong University of Science and Technology (HUST), China)
  • Eun-Hyoung Cho (Samsung, South Korea)
  • Christophe Detavernier (Ghent University, Belgium)
  • Anjana Devi (IFW and TU Dresden, Germany)
  • Howard Fairbrother (Johns Hopkins University, USA)
  • Katie Hurst (NREL, USA)
  • HanJin Lim (Samsung, South Korea)
  • Sébastien Moitzheim, (Powall, Netherlands)
  • David Muñoz-Rojas (LMGP, CNRS, France)
  • Seung Wook Ryu (SK hynix, South Korea)
  • Taewook Nam (Sejong University, South Korea)
  • Henrik Pedersen (Linköping University, Sweden)

ALE Plenary Speaker

ALE Invited Speaker

  • Eric A. Joseph (IBM Research Division, T.J. Watson Research Center, USA)
  • Harm C.M. Knoops (Oxford Instruments Plasma Technology, UK)
  • Jaewon Lee (SK Hynix, South Korea)
  • Younghee Lee (Lam Research, USA)
  • Jonas Sundquist (AlixLabs, Sweden)
  • Takayoshi Tsutsumi (Nagoya University, Japan)